User:Anjuagrawal/National Conferences

National Conferences:

1. S.P.Kumar, A.Agrawal, R.Chaujar, M.Gupta and R.S.Gupta, “Impact of GME Design on Nanometer HEMT Capacitances and its Influence on Device RF Performance”, Proc. of Mini-Colloquia on Compact Modeling of Advance Mosfet Structures and Mixed Mode Applications, Sponsored by the IEEE Electron Devices Society under its Distinguished Lecturer Program, January 5-6, Department of Electronic Science, University of Delhi, India, pp.47-48, 2008.

2. S.P.Kumar, A.Agrawal, R.Chaujar, M.Gupta and R.S.Gupta, “Nanoscale HEMT with GME Design for High Performance Analog Applications”, Proc. of Mini-Colloquia on Compact Modeling of Advance Mosfet Structures and Mixed Mode Applications, Sponsored by the IEEE Electron Devices Society under its Distinguished Lecturer Program, January 5-6, Department of Electronic Science, University of Delhi, India, pp.47-48, 2008.

3. R.Aggarwal, A.Agrawal, M.Gupta and R.S. Gupta, “High Temperature Modeling of AlGaN/GaN MISHFET and Its Relative Comparison with Conventional HFET for Microwave Power and Switching Applications”, Proc. of Mini-Colloquia on Compact Modeling of Advance Mosfet Structures and Mixed Mode Applications, Sponsored by the IEEE Electron Devices Society under its Distinguished Lecturer Program, January 5-6, Department of Electronic Science, University of Delhi, India, pp.47-48, 2008.

4. S.P.Kumar, A.Agrawal, S.Kabra, M.Gupta and R.S.Gupta, “Bias Dependent Analytical Model of AlGaN/GaN High Electron Mobility Transistor”, Proc. of National Conference on Recent Advancement in Microwave Technique and Applications (Microwave-2006), pp. 111-115, 6-8 October 2006, Jaipur, India..

5. S.P.Kumar, A.Agrawal, S.Kabra, M.Gupta and R.S.Gupta, “An Analysis of Bias Dependent Performance of AlGaN/GaN Modulation Doped Field Effect Transistor Using Accurate Velocity-Field Dependence”, Proc. of National Conference on Mathematical Techniques Emerging Paradigm for Electronics and IT Industries (MATEIT 2006), pp 322, 24-26 March 2006, New Delhi, India.

6. A.Agrawal, A.Goswami, S.Sen, R.S.Gupta, “Microwave Performance of Pseudomorphic for Modulation Doped Field Effect Transistor (AlGaAs/InGaAs) for millimeter and High Speed Circuit Applications”, Proc Advances in Electronics-ELECTRO 2000, Jan. 2001.

7. A.Agrawal, A.Goswami, S.Sen, R.S.Gupta, “Two dimensional charge control model for Pseudomorphic (AlGaAs/InGaAs) for Modulation Doped Field Effect Transistor”, Proc. National Symposium on Advances in Microwaves and Light Waves, Allied Pub. Ltd., New Delhi, pp. 76-79, March 2000.

8. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “Admittance Parameter Extraction for MOSFET valid up to 10 GHz”. Proc. National Symposium on Advances in Microwaves and Light Waves, Allied Pub. Ltd., New Delhi, pp.201-205, March 2000.

9. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “A Unified MOSFET Model including Reverse Short Channel and Narrow width Effects for Device Modeling in Circuit Simulation” Proc. National Seminar on Applied Systems Engineering and Soft Computing (SASES’2000) Agra, pp. 554-558, March 2000.