User:Anjuagrawal/International Referred Journals

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List of Publications

1. R.Aggarwal, A.Agrawal, M.Gupta and R.S. Gupta, “Gate Dielectric Engineering of Quarter Sub Micron AlGaN/GaN MISHFET: A New Device Architecture for Improved Transconductance and High Cut-off Frequency” Solid state Electronics.

2. S.P.Kumar, A.Agrawal, R.Chaujar, M.Gupta and R.S.Gupta, “Analytical Modeling and simulation of Subthreshold Behaviour in nanoscale Dual Material Gate AlGaN/GaN HEMT”, Superlattices and Microstructures, Accepted Jan 2008,

3. R.Aggarwal, A.Agrawal, M.Gupta and R.S. Gupta, “Analytical Performance Evaluation of AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) and its Comparison with Conventional HFETs for High Power Microwave Applications”, Microwave and Optical Technology Letters, vol.50, Issue 2, pp.331-338, February 2008.

4. S.P.Kumar, A.Agrawal, R.Chaujar, S.Kabra, M.Gupta and R.S.Gupta, “Threshold Voltage Model for Small Geometry AlGaN/GaN HEMTs Based on Analytical Solution of 3-D Poisson’s Equation”, Microelectronics Journal, vol 38, pp 1013-1020, 2007.

5. S.P.Kumar, A.Agrawal, S.Kabra, M.Gupta and R.S.Gupta, “An analysis for AlGaN/GaN Modulation Doped Field Effect Transistor using accurate velocity-field dependence for high power microwave frequency applications”, Microelectronics Journal, vol. 37, pp. 1339-1346, 2006.

6. Rashmi, A.Agrawal, S.Haldar, R.S.Gupta, “Analytical Model for DC characteristics and Small signal parameters of AlGaN/GaN Modulation Doped Field Transistor for Microwave Circuit Applications”, Microwave and Optical Technology Letters, vol. 27, no. 6, pp.413-419, Dec. 2000.

7. A.Agrawal, A.Goswami, R.S.Gupta ,“Frequency Optimization of Pseudomorphic Modulation Doped Field Transistor for Microwave and Millimeter Wave Applications”, Microwave and Optical Technology Letters, vol. 25, no. 6, pp.377-383, June 2000.

8. A.Agrawal, A.Goswami, S.Sen, R.S.Gupta “Current Voltage Characteristics and Field Distribution Of Pseudomorphic (AlGaAs/InGaAs) Modulation Doped Field Transistor for Microwave Circuit Applications”, Microwave and Optical Technology Letters, vol. 24,no. 6, pp.402-407, March 2000.

9. A.Agrawal, A.Goswami, S.Sen, R.S.Gupta, “Capacitance Voltage Characteristics and Cut-Off Frequency of Pseudomorphic Speed Circuit Applications”, Microwave and Optical Technology Letters, vol. 23 no. 5, pp.312-318, Dec.1999.

10. A.Agrawal, A.Goswami, S.Sen, R.S.Gupta, “Transconductance Extraction for Pseudomorphic Modulation Doped Field Effect Transistor (AlGaAs/InGaAs) for Microwave and Millimeter Wave Applications”, Microwave and Optical Technology Letters, vol. 22, no. 1, pp.41-48, July 1999.

11. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “An Analytical Approach for Extracting Small Signal Model Parameters of Silicon MOSFET for RF Applications”, Microwave and Optical Technology Letters, Dec. 2000.

12. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “Small Signal Analytical MOSFET model for Microwave Frequency Applications”, Microwave and Optical Technology Letters, vol. 25, no. 5, pp.346-352, June 2000.

13. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “Substrate Effect Dependent Scattering Parameter Extraction of Short Gate Length IGFET for its Microwave Circuit Applications”, Microwave and Optical Technology Letters, vol. 24, no. 5, pp.341-348, March 2000

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