User:Anjuagrawal/International Conferences

International Conferences:

1. S.P.Kumar, A.Agrawal, R.Chaujar, M.Gupta and R.S.Gupta, “High Linearity Performance of DMG AlGaN/GaN HEMT ”, XXIX General Assembly of the International Union of Radio Science (Union Radio Scientifique Internationale-URSI), Illinois, USA, August 07-16, 2008 (Accepted May 2008).

2. S.P.Kumar, A.Agrawal, R.Chaujar, S.Kabra, M.Gupta and R.S.Gupta, “3-Dimensional Analytical modeling and Simulation of Fully Depleted AlGaN/GaN Modulation Doped Field Effect transistor”, '''Proc. of Fourteenth International Workshop on the Physics of Semiconductor Devices (IWPSD-2007),''' pp.373-376, December 16-20, Mumbai, India, 2007.

3. R.Aggarwal, A.Agrawal, M.Gupta and R.S. Gupta, “Influence of Physical Parameters and Piezoelectric Polarization on Charge Control Characteristics of Si3N4/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET)”, '''Proc. of 14th International Workshop on The Physics of Semiconductor Devices (IWPSD)''', pp.435-438, December 16 –20, Mumbai, India, 2007.

4. S.P.Kumar, A.Agrawal, R.Chaujar, M.Gupta and R.S.Gupta, “Analytical Modeling and Simulation of Potential and Electric Field Distribution in Dual Material Gate HEMT For Suppressed Short Channel Effects”, '''Proc. of 19th Asia Pacific Microwave Conference (APMC-2007)''', pp. 2503-2506, December 11-14, Bangkok, Thailand, 2007.

5. R.Aggarwal, A.Agrawal, M.Gupta and R.S. Gupta, “An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications”, '''Proc. of 19th Asia Pacific Microwave Conference (APMC)''', Vol. 2, pp.1065-1068, December 11 –14, Bangkok, Thailand, 2007.

6. S.P.Kumar, A.Agrawal, S.Kabra, R.Chaujar, M.Gupta and R.S.Gupta, “Analytical Modeling and Simulation of Small Geometry AlGaN/GaN HEMTs”, '''Proc. of International Symposium on Microwave and Optical Technology (ISMOT 2007)''', pp.279-282, Monte Porzio Catone, Roma, Italy, 17-21 December 2007.

7. R.Aggarwal, A.Agrawal, M.Gupta and R.S. Gupta, “Impact of Innovative Gate Insulator Geometries and Their Thickness Scaling on the Device Performance of AlGaN/GaN MISHFET for Microwave Applications”, '''Proc. of 11th International Symposium on Microwave and Optical Technology (ISMOT)''', pp.169-172, Monte Porzio Catone, Roma, Italy, December 17-21, 2007.

8. S.P.Kumar, A.Agrawal, R.Chaujar, M.Gupta and R.S.Gupta, “Two-Dimensional Analytical Sub-Threshold Modeling and Simulation of Gate Material Engineered HEMT for Enhanced Carrier Transport Efficiency”, '''Proc. of International Semiconductor Device Research Symposium (ISDRS)''', pp 1892-3, 12-14 Dec, Maryland, USA, 2007.

9. R.Aggarwal, A.Agrawal, M.Gupta and R.S. Gupta, “Gate Dielectric Engineering of Sub Quarter Micron AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) for High Gain Characteristics”, '''Proc. of International Semiconductor Device Research Symposium, (ISDRS)''', December 12-14, College Park, MD, USA, 2007.

10. S.P.Kumar, A.Agrawal, S.Kabra, R.Chaujar, M.Gupta and R.S.Gupta, “Bias Dependent Analytical Model of High Electron Mobility Transistor”, '''Proc. of European Workshop on III-Nitride Semiconductor Materials and Devices (EW3NS-2006)''', September 18-20, 2006, Crete, Greece.

11. A.Agrawal, A.Goswami, R.S.Gupta, “DC and Microwave Performance of Pseudomorphic Modulation Doped Field Effect Transistor (AlGaAs/InGaAs) for Millimeter Wave and High Speed Digital IC Applications”, '''Proc. Asia Pacific Microwave Conference''', pp 144-148, Sydney, Dec. 2000.

12. A.Agrawal, A.Goswami, S.Sen, R.S.Gupta, “Modeling of Pseudomorphic Modulation Doped Field Effect Transistor (AlGaAs/InGaAs) for Microwave and Millimeter Wave Applications”, '''Proc. Third International Conference on Low Dimensional Structures and Devices. Turkey''', 1999.

13. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “Fringing Field Dependent Small Geometry MOSFET Model for Radio Frequency Applications”, '''Proc. International Workshop on Physics of Semiconductor Devices IWPSD''', vol. II, pp. 568-571, New-Delhi, Dec.1999.

14. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “Admittance Parameter Extraction of Short Gate Length MOSFET including Substrate Effect for Microwave Frequency Applications”, '''Proc. Progress in Electromagnetic Research Symposium (PIERS’2000)''', Boston, U.S.A. July2000.

15. A.Goswami, A.Agrawal, S.Bose, S.Haldar, R.S.Gupta, “High Frequency Y-Parameters Analysis of Small Geometry MOSFET for Microwave Frequency Applications”, '''Proc. International Symposium on Recent Advances in Microwave Technology (ISRAMT’99)''', Malaga, Spain, pp.125-129,1999.

16. A.Agrawal, A.Goswami, S.Sen, R.S.Gupta, “Analytical Model for Field Distribution and Capacitance Voltage Characteristics of Pseudomorphic (AlGaAs/InGaAs) for Modulation Doped Field Effect Transistor”, '''Proc. International Workshop on Physics of Semiconductor Devices (IWPSD)'''vol.1, pp. 542-545, New-Delhi, Dec.1999.